|
Product Attribute |
Attribute Value |
|
Vds - Drain-Source Breakdown Voltage: |
30 V |
|
Id - Continuous Drain Current: |
69 A |
|
Rds On - Drain-Source Resistance: |
3.2 mOhms |
|
Vgs - Gate-Source Voltage: |
- 20 V, + 20 V |
|
Vgs th - Gate-Source Threshold Voltage: |
2.2 V |
|
Qg - Gate Charge: |
26 nC |
|
Minimum Operating Temperature: |
- 55 C |
|
Maximum Operating Temperature: |
+ 150 C |
|
Pd - Power Dissipation: |
30.5 W |
|
Fall Time: |
3 ns |
|
Forward Transconductance - Min: |
58 S |
|
Product Type: |
MOSFETs |
|
Rise Time: |
28 ns |
|
Typical Turn-Off Delay Time: |
24 ns |
|
Typical Turn-On Delay Time: |
8 ns |
|
Unit Weight: |
0.026455 oz |
Power MOSFET 30 V, 69 A, Single N−Channel, SO−8 FL
