|
Product Attribute |
Attribute Value |
|
Vds - Drain-Source Breakdown Voltage: |
100 V |
|
Id - Continuous Drain Current: |
47.1 A |
|
Rds On - Drain-Source Resistance: |
12.2 mOhms |
|
Vgs - Gate-Source Voltage: |
- 20 V, + 20 V |
|
Vgs th - Gate-Source Threshold Voltage: |
3 V |
|
Qg - Gate Charge: |
19 nC |
|
Minimum Operating Temperature: |
- 55 C |
|
Maximum Operating Temperature: |
+ 175 C |
|
Pd - Power Dissipation: |
59.5 W |
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
