|
Product Attribute |
Attribute Value |
|
Vds - Drain-Source Breakdown Voltage: |
40 V |
|
Id - Continuous Drain Current: |
102 A |
|
Rds On - Drain-Source Resistance: |
2.7 mOhms |
|
Vgs - Gate-Source Voltage: |
- 20 V, + 20 V |
|
Vgs th - Gate-Source Threshold Voltage: |
2.5 V |
|
Qg - Gate Charge: |
23 nC |
|
Minimum Operating Temperature: |
- 55℃ |
|
Maximum Operating Temperature: |
+ 175℃ |
|
Pd - Power Dissipation: |
68 W |
|
Configuration: |
Single |
|
Fall Time: |
3 ns |
|
Forward Transconductance - Min: |
93 S |
|
Typical Turn-Off Delay Time: |
19 ns |
|
Typical Turn-On Delay Time: |
10 ns |
|
Unit Weight: |
0.006596 oz |
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
